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| S T U/D1855P LS S amHop Microelectronics C orp. Aug,18 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -55V F E AT UR E S ( m W ) Max ID -15A R DS (ON) S uper high dense cell design for low R DS (ON). 73 @ V G S = -10V 90 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (TA=25 C unles s otherwis e noted) S ymbol Vspike d VDS VGS Limit 60 -55 20 -15 -12 -30 -10 42 28 -55 to 150 W C Unit V V V A A A A 25 C 70 C ID IDM IS PD TJ, TS TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC 1 JA R 3 50 C /W C /W S TU/D1855PLS ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted) = Parameter OFF CHARACTERISTICS 5 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition VGS 0V, ID -250uA VDS -44V, VGS 0V VGS 20V, VDS 0V VDS VGS, ID = -250uA VGS -10V, ID -10A VGS -4.5V, ID -6A VDS = -5V, VGS = -10V VDS -15V, ID -10A Min Typ C Max Unit -55 -1 100 -1.3 -1.6 62 80 V uA nA V m-ohm m-ohm ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS c -2.5 73 90 Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 20 12 925 86 61 3.3 17.6 28 87.2 27.2 18.8 9.2 1.6 4.7 A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance CISS COSS CRSS Rg c VDS =-30V, VGS = 0V f =1.0MHZ VDS =0V, VGS=0A , f=1MHZ VD = -30V, ID = -1A, VGEN = - 10V, RGEN = 6 ohm VDS =-30V,ID =-5A,VGS =-10V VDS =-30V,ID =-5A,VGS =-4.5V VDS =-30V, ID = -5A, VGS =-10V 2 ohm SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) t tD(OFF) t Qg Qgs Qgd ns ns ns ns nC nC nC nC S TU/D1855PLS ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Symbol b Condition Min Typ Max Unit -0.9 -1.3 V C DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VGS = 0V, Is =-10A VSD Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max 20 20 -VGS=10V -VGS=4V 15 16 -VGS=8V -ID, Drain Current(A) -ID, Drain Current (A) -VGS=4.5V 12 10 8 4 0 5 Tj=125 C 1 0 25 C -55 C 2.4 3.2 4.0 4.8 -VGS=3V 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 Ciss 2.2 Figure 2. Transfer Characteristics VGS=-10V ID=-10A 800 600 400 200 0 RDS(ON), On-Resistance Normalized Coss 10 15 20 25 30 1.8 1.4 1.0 0.6 0.2 0 C, Capacitance (pF) Crss 0 5 -50 -25 0 25 50 75 100 125 -VDS, Drain-to Source Voltage (V) TJ, Junction Temperature ( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 3 S TU/D1855PLS 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 VDS=VGS ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 ID=-250uA 75 100 125 75 100 125 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 18 15 12 9 6 3 0 VDS=-15V 0 5 10 15 20 25 Figure 6. Breakdown Voltage Variation with Temperature 20 10 gFS, Transconductance (S) -Is, Source-drain current (A) 1 0 0.4 0.6 0.8 1.0 TJ=25 C 1.2 1.4 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 -VGS, Gate to Source Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current 60 8 6 4 2 0 0 VDS=-30V ID=-5A -ID, Drain Current (A) 10 R DS (ON ) Li mi t 10 10 0m ms 1 DC 1s s 0.1 0.03 VGS=-10V Single Pulse Tc=25 C 0.1 1 10 30 60 3 6 9 12 15 18 21 24 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area 4 S TU/D1855PLS V DD ton V IN D VGS R GEN G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVERTED 6 S V IN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R qJ A (t)=r (t) * R qJ A R qJ A=S ee Datas heet T J M-T A = P DM* R qJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S TU/D1855PLS 6 S TU/D1855P LS 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S TU/D1855PLS TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE A0 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 E 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3O0.05 TO-252(16 P) 6.80 O0.1 r1.5+ 0.1- 16.0 0 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M N W T H K 10.6 S 2.0 O0.5 G R V 0 r330 O 0.5 r97O 1.017.0+ 1.5- 2.2 r13.0+ 0.5- 0.2 8 |
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